SMBJ6.0AE3/TR13 vs SMBJ6.0AHM3/I feature comparison

SMBJ6.0AE3/TR13 Microchip Technology Inc

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SMBJ6.0AHM3/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description SMBJ, 2 PIN SMB, 2 PIN
Reach Compliance Code compliant unknown
Factory Lead Time 20 Weeks
Samacsys Manufacturer Microchip
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V 7.37 V
Breakdown Voltage-Min 6.67 V 6.67 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Reference Standard IEC-61000-4-2, 4-4, 4-5 AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 7.02 V
Clamping Voltage-Max 10.3 V
Forward Voltage-Max (VF) 3.5 V
Reverse Current-Max 800 µA
Reverse Test Voltage 6 V

Compare SMBJ6.0AE3/TR13 with alternatives

Compare SMBJ6.0AHM3/I with alternatives