SMBJ58C-51-E3 vs SMBJ58CATRE3 feature comparison

SMBJ58C-51-E3 Vishay Semiconductors

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SMBJ58CATRE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 78.7 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 71.55 V 67.8 V
Clamping Voltage-Max 103 V 93.6 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 58 V 58 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Additional Feature TR, 7 INCH: 750
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ58C-51-E3 with alternatives

Compare SMBJ58CATRE3 with alternatives