SMBJ58A vs SMBJ58AHE3-TP feature comparison

SMBJ58A International Semiconductor Inc

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SMBJ58AHE3-TP Micro Commercial Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICRO COMMERCIAL COMPONENTS CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 71.2 V 71.2 V
Breakdown Voltage-Min 64.4 V 64.4 V
Breakdown Voltage-Nom 67.8 V 67.8 V
Clamping Voltage-Max 93.6 V 93.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -40 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 58 V 58 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 64 1
Rohs Code Yes
Package Description R-PDSO-C2
Samacsys Manufacturer MCC
Additional Feature UL RECOGNIZED
JEDEC-95 Code DO-214AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 10

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Compare SMBJ58AHE3-TP with alternatives