SMBJ58A
vs
MSMBJ58AE3/TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
JGD SEMICONDUCTORS CO LTD
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Category CO2 Kg
8.54
Breakdown Voltage-Nom
67.8 V
67.8 V
Clamping Voltage-Max
93.6 V
93.6 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
58 V
58 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Package Description
SMBJ, 2 PIN
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
71.2 V
Breakdown Voltage-Min
64.4 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1.38 W
Qualification Status
Not Qualified
Reference Standard
IEC-61000-4-2,4-4,4-5; MIL-19500; MIL-STD-750
Reverse Current-Max
1 µA
Reverse Test Voltage
58 V
Technology
AVALANCHE
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
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