SMBJ58-T3
vs
SMBJ58HE3/5B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
VISHAY INTERTECHNOLOGY INC
Package Description
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
78.71 V
78.7 V
Breakdown Voltage-Min
64.4 V
64.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
58 V
58 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
71.55 V
Clamping Voltage-Max
103 V
Forward Voltage-Max (VF)
3.5 V
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Compare SMBJ58-T3 with alternatives
Compare SMBJ58HE3/5B with alternatives