SMBJ54ATR vs P6SMBJ54A feature comparison

SMBJ54ATR Sangdest Microelectronics (Nanjing) Co Ltd

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P6SMBJ54A Hitano Enterprise Corp

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD HITANO ENTERPRISE CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-08-03
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 66.3 V 66.3 V
Breakdown Voltage-Min 60 V 60 V
Breakdown Voltage-Nom 63.15 V 63.15 V
Clamping Voltage-Max 87.1 V 87.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-750 IEC-1000-4-2, 4-4
Rep Pk Reverse Voltage-Max 54 V 54 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 54 V 54 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 9
Package Description SMB, 2 PIN
Power Dissipation-Max 5 W

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