SMBJ54 vs SMBJ54A-G feature comparison

SMBJ54 Galaxy Microelectronics

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SMBJ54A-G Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code SMB
Package Description R-PDSO-J2 R-PDSO-C2
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 73.3 V 69 V
Breakdown Voltage-Min 60 V 60 V
Breakdown Voltage-Nom 66.65 V
Clamping Voltage-Max 96.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 54 V 54 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 47 2
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare SMBJ54A-G with alternatives