SMBJ51E3/TR7 vs SMBJ51A-H feature comparison

SMBJ51E3/TR7 Microsemi Corporation

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SMBJ51A-H Bourns Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP BOURNS INC
Part Package Code DO-214AA
Package Description R-PDSO-J2 R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 69.3 V 62.7 V
Breakdown Voltage-Min 56.7 V 56.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Additional Feature PRSM-MIN
Breakdown Voltage-Nom 59.7 V
Clamping Voltage-Max 82.4 V
Peak Reflow Temperature (Cel) 260
Reference Standard IEC-61000-4-2, 4-4, 4-5
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMBJ51A-H with alternatives