SMBJ51CA-GT3
vs
P6SMBJ51CAF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
WORLD PRODUCTS INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
65.2 V
Breakdown Voltage-Min
56.7 V
56.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
NOT SPECIFIED
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Pbfree Code
Part Package Code
DO-214AA
Pin Count
2
Additional Feature
UL RECOGNIZED
Breakdown Voltage-Nom
60.95 V
Clamping Voltage-Max
82.4 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max
5 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SMBJ51CA-GT3 with alternatives
Compare P6SMBJ51CAF with alternatives