SMBJ51-G
vs
P6SMBJ51-AU_R2_000A1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
PAN JIT INTERNATIONAL INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
not_compliant
Breakdown Voltage-Max
71.8 V
71.8 V
Breakdown Voltage-Min
56.7 V
56.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
64.25 V
Clamping Voltage-Max
91.1 V
Compare SMBJ51-G with alternatives
Compare P6SMBJ51-AU_R2_000A1 with alternatives