SMBJ5.0C
vs
SMBJ5.0CAHR5G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MDE SEMICONDUCTOR INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
7.37 V
7 V
Breakdown Voltage-Min
6.03 V
6.4 V
Breakdown Voltage-Nom
6.7 V
6.7 V
Clamping Voltage-Max
9.2 V
9.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
MIL-STD-750, UL LISTED
AEC-Q101
Rep Pk Reverse Voltage-Max
5 V
5 V
Reverse Current-Max
1 µA
Reverse Test Voltage
5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
3
1
Package Description
SMB, 2 PIN
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
3 W
Terminal Finish
MATTE TIN
Compare SMBJ5.0C with alternatives
Compare SMBJ5.0CAHR5G with alternatives