SMBJ400A vs SMBJ400AM4G feature comparison

SMBJ400A Galaxy Microelectronics

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SMBJ400AM4G Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SMB
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 491 V 494 V
Breakdown Voltage-Min 445 V 447 V
Breakdown Voltage-Nom 468 V
Clamping Voltage-Max 646 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 5 µA
Reverse Test Voltage 400 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 28 1
Rohs Code Yes
JEDEC-95 Code DO-214AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Terminal Finish MATTE TIN

Compare SMBJ400A with alternatives

Compare SMBJ400AM4G with alternatives