SMBJ3V3HM3_B/I
vs
SMBJ3V3-M3/5B
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY SEMICONDUCTORS
|
Package Description |
SMB, 2 PIN
|
R-PDSO-J2
|
Reach Compliance Code |
unknown
|
unknown
|
Factory Lead Time |
8 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
EXCELLENT CLAMPING CAPABILITY
|
Breakdown Voltage-Min |
4.1 V
|
4.1 V
|
Clamping Voltage-Max |
7.3 V
|
7.3 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-J2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
5 W
|
5 W
|
Reference Standard |
AEC-Q101
|
|
Rep Pk Reverse Voltage-Max |
3.3 V
|
3.3 V
|
Reverse Current-Max |
200 µA
|
200 µA
|
Reverse Test Voltage |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
C BEND
|
J BEND
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
2
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.50
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare SMBJ3V3HM3_B/I with alternatives
Compare SMBJ3V3-M3/5B with alternatives