SMBJ36CTRE3
vs
SMBJ36CM4
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
TR, 7 INCH: 750
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Nom |
44.45 V
|
44.45 V
|
| Clamping Voltage-Max |
64.3 V
|
64.3 V
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
36 V
|
36 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
30
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
R-PDSO-C2
|
| Breakdown Voltage-Max |
|
48.9 V
|
| Breakdown Voltage-Min |
|
40 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Non-rep Peak Rev Power Dis-Max |
|
600 W
|
| Number of Elements |
|
1
|
| Power Dissipation-Max |
|
3 W
|
| Technology |
|
AVALANCHE
|
|
|
|
Compare SMBJ36CTRE3 with alternatives
Compare SMBJ36CM4 with alternatives