SMBJ36A-AT
vs
SMBJ36HM4
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
BRIGHTKING INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
SMB, 2 PIN
SMB, 2 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
44.2 V
48.9 V
Breakdown Voltage-Min
40 V
40 V
Breakdown Voltage-Nom
42.1 V
44.45 V
Clamping Voltage-Max
58.1 V
64.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Reference Standard
AEC-Q101; UL CERTIFIED
AEC-Q101
Rep Pk Reverse Voltage-Max
36 V
36 V
Reverse Current-Max
1 µA
Reverse Test Voltage
36 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
30
Base Number Matches
3
1
JESD-609 Code
e3
Terminal Finish
MATTE TIN
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