SMBJ33CAE3/TR13 vs SMBJ33CAHE3/5B feature comparison

SMBJ33CAE3/TR13 Microchip Technology Inc

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SMBJ33CAHE3/5B Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description SMBJ, 2 PIN SMB, 2 PIN
Reach Compliance Code compliant not_compliant
Factory Lead Time 20 Weeks
Samacsys Manufacturer Microchip Vishay
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 40.6 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 38.65 V 38.65 V
Clamping Voltage-Max 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W
Reference Standard IEC-61000-4-2, 4-4, 4-5 AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 1 µA
Reverse Test Voltage 33 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ33CAE3/TR13 with alternatives

Compare SMBJ33CAHE3/5B with alternatives