SMBJ33C-T3
vs
SMBJ33CATR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROSEMI CORP
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
44.86 V
40.6 V
Breakdown Voltage-Min
36.7 V
36.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
33 V
33 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Part Package Code
DO-214AA
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TR, 7 INCH; 750
Breakdown Voltage-Nom
38.65 V
Clamping Voltage-Max
53.3 V
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
235
Power Dissipation-Max
1.38 W
Terminal Finish
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
20
Compare SMBJ33C-T3 with alternatives
Compare SMBJ33CATR with alternatives