SMBJ33C-E3 vs SMBJ33CE3/TR13 feature comparison

SMBJ33C-E3 Vishay Semiconductors

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SMBJ33CE3/TR13 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROCHIP TECHNOLOGY INC
Part Package Code DO-214AA
Package Description R-PDSO-C2 SMBJ, 2 PIN
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 44.9 V 44.9 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 40.8 V 40.8 V
Clamping Voltage-Max 59 V 59 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 2 2
Factory Lead Time 16 Weeks
Additional Feature TR, 7 INCH: 750
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Terminal Finish MATTE TIN

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