SMBJ33AHR4G
vs
SMBJ33A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SHENZHEN SOCAY ELECTRONICS CORP LTD
Package Description
SMB, 2 PIN
SMB, 2 PIN
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
40.6 V
40.6 V
Breakdown Voltage-Min
36.7 V
36.7 V
Breakdown Voltage-Nom
38.65 V
38.65 V
Clamping Voltage-Max
53.3 V
53.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Reference Standard
AEC-Q101
IEC-61000-4-2, 4-4; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
33 V
33 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
66
Forward Voltage-Max (VF)
3.5 V
Reverse Current-Max
5 µA
Reverse Test Voltage
33 V
Compare SMBJ33AHR4G with alternatives
Compare SMBJ33A with alternatives