SMBJ33AHR vs SMBJ33A-AT/TR13 feature comparison

SMBJ33AHR Digitron Semiconductors

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SMBJ33A-AT/TR13 YAGEO Corporation

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIGITRON SEMICONDUCTORS YAGEO CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 40.6 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 38.65 V 38.65 V
Clamping Voltage-Max 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Reference Standard MIL-19500 AEC-Q101; UL CERTIFIED
Rep Pk Reverse Voltage-Max 33 V 33 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Factory Lead Time 18 Weeks
Date Of Intro 2019-04-29
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

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Compare SMBJ33A-AT/TR13 with alternatives