SMBJ33A.TB vs SMBJ33E3/TR feature comparison

SMBJ33A.TB Semtech Corporation

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SMBJ33E3/TR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 36.7 V 36.7 V
Clamping Voltage-Max 53.3 V 59 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1.38 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 11
Rohs Code Yes
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Date Of Intro 1995-01-01
Additional Feature TR, 7 INCH; 750
Breakdown Voltage-Max 44.9 V
Breakdown Voltage-Nom 40.8 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 33 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ33A.TB with alternatives

Compare SMBJ33E3/TR with alternatives