SMBJ33A/TR13
vs
SMBJ33AHR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PULSE ELECTRONICS CORP
DIGITRON SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Base Number Matches
4
1
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
40.6 V
Breakdown Voltage-Min
36.7 V
Breakdown Voltage-Nom
38.65 V
Clamping Voltage-Max
53.3 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
33 V
Reverse Current-Max
1 µA
Reverse Test Voltage
33 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
C BEND
Terminal Position
DUAL
Compare SMBJ33AHR with alternatives