SMBJ33-E3/5B vs SMBJ33AE3/TR feature comparison

SMBJ33-E3/5B Vishay Semiconductors

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SMBJ33AE3/TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 44.9 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Breakdown Voltage-Nom 40.8 V 38.65 V
Clamping Voltage-Max 59 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 2 1
Date Of Intro 1995-01-01
Additional Feature TR, 7 INCH; 750
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Terminal Finish MATTE TIN

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