SMBJ30CA-E3/52
vs
MASMBJ30CAE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROCHIP TECHNOLOGY INC
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
SMBJ, 2 PIN
Pin Count
2
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max
36.8 V
36.8 V
Breakdown Voltage-Min
33.3 V
33.3 V
Breakdown Voltage-Nom
35.05 V
Clamping Voltage-Max
48.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
1.38 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
1 µA
Reverse Test Voltage
30 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
10
Base Number Matches
2
2
Factory Lead Time
40 Weeks
Compare SMBJ30CA-E3/52 with alternatives
Compare MASMBJ30CAE3 with alternatives