SMBJ30A.TB vs SMBJ28A feature comparison

SMBJ30A.TB Semtech Corporation

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SMBJ28A International Semiconductor Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 33.3 V 31.1 V
Clamping Voltage-Max 48.4 V 45.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Max 34.4 V
Breakdown Voltage-Nom 32.8 V
Rep Pk Reverse Voltage-Max 28 V

Compare SMBJ30A.TB with alternatives

Compare SMBJ28A with alternatives