SMBJ30A-T vs MSMBJ30A/TR feature comparison

SMBJ30A-T Rectron Semiconductor

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MSMBJ30A/TR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer RECTRON LTD MICROSEMI CORP
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN HIGH RELIABILITY
Breakdown Voltage-Max 36.8 V 36.8 V
Breakdown Voltage-Min 33.3 V 33.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Package Description PLASTIC, SMBJ, 2 PIN
Samacsys Manufacturer Microsemi Corporation
Breakdown Voltage-Nom 35.05 V
Clamping Voltage-Max 48.4 V
Moisture Sensitivity Level 1
Qualification Status Not Qualified

Compare SMBJ30A-T with alternatives

Compare MSMBJ30A/TR with alternatives