SMBJ300C vs SMBJ300CAR4G feature comparison

SMBJ300C Galaxy Microelectronics

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SMBJ300CAR4G Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SMB
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 408 V 371 V
Breakdown Voltage-Min 333 V 335 V
Breakdown Voltage-Nom 370.5 V
Clamping Voltage-Max 535 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 300 V 300 V
Reverse Current-Max 5 µA
Reverse Test Voltage 300 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 10 1
Rohs Code Yes
Package Description R-PDSO-C2
JEDEC-95 Code DO-214AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Terminal Finish MATTE TIN

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