SMBJ30
vs
SMBJ30TR
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMTECH CORP
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
33.3 V
33.3 V
Breakdown Voltage-Nom
37 V
37 V
Clamping Voltage-Max
53.5 V
53.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1.38 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
47
1
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Additional Feature
TR, 7 INCH; 750
Breakdown Voltage-Max
40.7 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
235
Time@Peak Reflow Temperature-Max (s)
20
Compare SMBJ30 with alternatives
Compare SMBJ30TR with alternatives