SMBJ28 vs SMBJ28AE3TR feature comparison

SMBJ28 Galaxy Microelectronics

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SMBJ28AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MICROSEMI CORP
Part Package Code SMB DO-214AA
Package Description R-PDSO-J2 R-PDSO-C2
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN TR, 7 INCH; 750
Breakdown Voltage-Max 38 V 34.4 V
Breakdown Voltage-Min 31.1 V 31.1 V
Breakdown Voltage-Nom 34.55 V 32.75 V
Clamping Voltage-Max 50 V 45.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 28 V 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 47 1
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ28 with alternatives

Compare SMBJ28AE3TR with alternatives