SMBJ26A-T
vs
MASMBJ26AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
RECTRON LTD
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
31.9 V
31.9 V
Breakdown Voltage-Min
28.9 V
28.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.38 W
Rep Pk Reverse Voltage-Max
26 V
26 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
SMBJ, 2 PIN
Factory Lead Time
40 Weeks
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Time@Peak Reflow Temperature-Max (s)
10
Compare SMBJ26A-T with alternatives
Compare MASMBJ26AE3 with alternatives