SMBJ26A/TR7 vs SMBJ26 feature comparison

SMBJ26A/TR7 YAGEO Corporation

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SMBJ26 Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer YAGEO CORP GALAXY SEMI-CONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-J2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2019-04-29
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN, UL CERTIFIED EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 31.9 V 35.3 V
Breakdown Voltage-Min 28.9 V 28.9 V
Breakdown Voltage-Nom 30.4 V 32.1 V
Clamping Voltage-Max 42.1 V 46.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard UL CERTIFIED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 4 47

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