SMBJ22TRE3
vs
SMBJ24AR4
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
27.1 V
28.1 V
Clamping Voltage-Max
39.4 V
38.9 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
22 V
24 V
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
30
Base Number Matches
1
1
Package Description
SMB, 2 PIN
Breakdown Voltage-Max
29.5 V
Breakdown Voltage-Min
26.7 V
Configuration
SINGLE
Diode Element Material
SILICON
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Power Dissipation-Max
3 W
Technology
AVALANCHE
Compare SMBJ22TRE3 with alternatives
Compare SMBJ24AR4 with alternatives