SMBJ22A
vs
MXLSMBJ22AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MDE SEMICONDUCTOR INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
HIGH RELIABILITY
Breakdown Voltage-Max
26.9 V
26.9 V
Breakdown Voltage-Min
24.4 V
24.4 V
Breakdown Voltage-Nom
25.65 V
25.65 V
Clamping Voltage-Max
35.5 V
35.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-J2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max
22 V
22 V
Reverse Current-Max
1 µA
Reverse Test Voltage
22 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
J BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
10
Base Number Matches
2
1
Package Description
ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
1.38 W
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare SMBJ22A with alternatives
Compare MXLSMBJ22AE3 with alternatives