SMBJ200CAR4G vs SMBJ200C feature comparison

SMBJ200CAR4G Taiwan Semiconductor

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SMBJ200C BrightKing Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BRIGHTKING INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 247 V
Breakdown Voltage-Min 224 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 1 11
Breakdown Voltage-Nom 235.5 V
Clamping Voltage-Max 324 V

Compare SMBJ200CAR4G with alternatives

Compare SMBJ200C with alternatives