SMBJ200C vs SMBJ200C feature comparison

SMBJ200C Pulse Electronics Corporation

Buy Now Datasheet

SMBJ200C Galaxy Microelectronics

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer PULSE ELECTRONICS CORP CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 235.5 V 247 V
Clamping Voltage-Max 324 V 356 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount YES YES
Base Number Matches 7 2
Part Package Code SMB
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 272 V
Breakdown Voltage-Min 222 V
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 5 µA
Reverse Test Voltage 200 V
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare SMBJ200C with alternatives

Compare SMBJ200C with alternatives