SMBJ17CT1
vs
SMBJ17CATR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMITRON
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-C2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
23.9 V
20.9 V
Breakdown Voltage-Min
18.9 V
18.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
MIL-STD-750
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Rohs Code
Date Of Intro
2018-08-03
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
19.9 V
Clamping Voltage-Max
27.6 V
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
17 V
Reverse Current-Max
5 µA
Reverse Test Voltage
17 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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