SMBJ170AHE3-TP
vs
SMBJ170HR4G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICRO COMMERCIAL COMPONENTS CORP
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
MCC
Additional Feature
UL RECOGNIZED
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
209 V
231 V
Breakdown Voltage-Min
189 V
189 V
Breakdown Voltage-Nom
199 V
210 V
Clamping Voltage-Max
275 V
304 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Reference Standard
AEC-Q101
AEC-Q101
Rep Pk Reverse Voltage-Max
170 V
170 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
30
Base Number Matches
1
1
Rohs Code
Compare SMBJ170AHE3-TP with alternatives
Compare SMBJ170HR4G with alternatives