SMBJ17
vs
SMBJ17-E3/5B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
compliant
Breakdown Voltage-Max
23.1 V
23.1 V
Breakdown Voltage-Min
18.9 V
18.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
17 V
17 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
46
2
Part Package Code
DO-214AA
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
21 V
Clamping Voltage-Max
30.5 V
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Compare SMBJ17 with alternatives
Compare SMBJ17-E3/5B with alternatives