SMBJ17 vs SMBJ17HR4 feature comparison

SMBJ17 Diodes Incorporated

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SMBJ17HR4 Taiwan Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 23.9 V 23.1 V
Breakdown Voltage-Min 18.9 V 18.9 V
Breakdown Voltage-Nom 21 V
Clamping Voltage-Max 30.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 17 V 17 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 25 2
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ17 with alternatives

Compare SMBJ17HR4 with alternatives