SMBJ17/TR
vs
P6SMB20AHR4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TAIWAN SEMICONDUCTOR CO LTD
Package Description
PLASTIC PACKAGE-2
R-PDSO-C2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
1995-01-01
Additional Feature
TR, 7 INCH; 750
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
23.1 V
21 V
Breakdown Voltage-Min
18.9 V
19 V
Breakdown Voltage-Nom
21 V
20 V
Clamping Voltage-Max
30.5 V
27.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
235
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.38 W
3 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
17 V
17.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
20
Base Number Matches
1
1
Samacsys Manufacturer
Taiwan Semiconductor
Reference Standard
AEC-Q101
Compare SMBJ17/TR with alternatives
Compare P6SMB20AHR4 with alternatives