SMBJ16CATRE3
vs
SMBJ16C-51-E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
Breakdown Voltage-Nom
18.75 V
19.8 V
Clamping Voltage-Max
26 V
28.8 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
16 V
16 V
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
J BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
1
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Breakdown Voltage-Max
21.8 V
Breakdown Voltage-Min
17.8 V
Configuration
SINGLE
Diode Element Material
SILICON
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Technology
AVALANCHE
Compare SMBJ16CATRE3 with alternatives
Compare SMBJ16C-51-E3 with alternatives