SMBJ15CAQ-13-F vs SMBJ15CR4G feature comparison

SMBJ15CAQ-13-F Diodes Incorporated

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SMBJ15CR4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 40 Weeks
Date Of Intro 2018-10-24
Samacsys Manufacturer Diodes Incorporated
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 19.2 V 20.4 V
Breakdown Voltage-Min 16.7 V 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Reference Standard AEC-Q101; ISO 7637-2; ISO 10605
Rep Pk Reverse Voltage-Max 15 V 15 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 18.55 V
Clamping Voltage-Max 26.9 V
Time@Peak Reflow Temperature-Max (s) 30

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