SMBJ150CHE3/5B vs P6SMB170CAHM4G feature comparison

SMBJ150CHE3/5B Vishay Intertechnologies

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P6SMB170CAHM4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 204 V 179 V
Breakdown Voltage-Min 167 V 162 V
Breakdown Voltage-Nom 185.5 V 170 V
Clamping Voltage-Max 268 V 234 V
Configuration SINGLE SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 150 V 145 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Base Number Matches 2 1
Package Description SMB, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL

Compare SMBJ150CHE3/5B with alternatives

Compare P6SMB170CAHM4G with alternatives