SMBJ14T1
vs
P6SMB18HR4
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CRYDOM INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW INDUCTANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
19.8 V
19.8 V
Breakdown Voltage-Min
15.6 V
16.2 V
Breakdown Voltage-Nom
17.7 V
18 V
Clamping Voltage-Max
25.8 V
26.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.5 W
3 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
14 V
14.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Rohs Code
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Compare SMBJ14T1 with alternatives
Compare P6SMB18HR4 with alternatives