SMBJ14C vs SMBJ14CAE3 feature comparison

SMBJ14C MDE Semiconductor Inc

Buy Now Datasheet

SMBJ14CAE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 18.04 V 17.2 V
Breakdown Voltage-Min 14.76 V 15.6 V
Breakdown Voltage-Nom 16.4 V 16.4 V
Clamping Voltage-Max 23.2 V 23.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 14 V 14 V
Reverse Current-Max 1 µA
Reverse Test Voltage 14 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 44 1
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Date Of Intro 1995-01-01
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare SMBJ14C with alternatives

Compare SMBJ14CAE3 with alternatives