SMBJ14C vs SMBJ14C-T3 feature comparison

SMBJ14C MDE Semiconductor Inc

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SMBJ14C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 18.04 V 19.07 V
Breakdown Voltage-Min 14.76 V 15.6 V
Breakdown Voltage-Nom 16.4 V
Clamping Voltage-Max 23.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750, UL LISTED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 14 V 14 V
Reverse Current-Max 1 µA
Reverse Test Voltage 14 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 44 2
Package Description R-PDSO-C2
Qualification Status Not Qualified

Compare SMBJ14C with alternatives

Compare SMBJ14C-T3 with alternatives