SMBJ14A.TB vs P6SMB18HR4G feature comparison

SMBJ14A.TB Semtech Corporation

Buy Now Datasheet

P6SMB18HR4G Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 15.6 V 16.2 V
Clamping Voltage-Max 23.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 3 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 19.8 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 14.5 V
Terminal Finish MATTE TIN

Compare SMBJ14A.TB with alternatives

Compare P6SMB18HR4G with alternatives