SMBJ14.TF
vs
SMBJ14AHE3/52
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMTECH CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
15.6 V
15.6 V
Clamping Voltage-Max
25.8 V
23.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Pbfree Code
Rohs Code
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
Additional Feature
UL RECOGNIZED, HIGH RELIABILITY
Breakdown Voltage-Max
17.2 V
Breakdown Voltage-Nom
16.4 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
14 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
40
Compare SMBJ14.TF with alternatives
Compare SMBJ14AHE3/52 with alternatives