SMBJ130CHR4 vs SMBJ130CA feature comparison

SMBJ130CHR4 Taiwan Semiconductor

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SMBJ130CA Vishay Intertechnologies

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 176 V 159 V
Breakdown Voltage-Min 144 V 144 V
Breakdown Voltage-Nom 160 V 151.5 V
Clamping Voltage-Max 231 V 209 V
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 130 V 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 61

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