SMBJ130C vs P6SMB160CAHR4 feature comparison

SMBJ130C Pulse Electronics Corporation

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P6SMB160CAHR4 Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer PULSE ELECTRONICS CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 151.5 V
Clamping Voltage-Max 209 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 130 V 136 V
Surface Mount YES YES
Base Number Matches 7 2
Rohs Code Yes
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 168 V
Breakdown Voltage-Min 152 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL

Compare SMBJ130C with alternatives

Compare P6SMB160CAHR4 with alternatives